Temperature dependent regulation of threshold voltage
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United States of America Patent
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Jul 12, 2005
Grant Date -
N/A
app pub date -
Mar 2, 2004
filing date -
Mar 2, 2004
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Abstract
Embodiments circuits provide a transistor body bias voltage so that the ratio of ION to IOFF is constant over a range of temperature, where ION is a transistor current when ON and IOFF is a (leakage) transistor current when OFF. In one embodiment, a nFET is biased to provide ION to a current mirror that sources a current AION to a node, a nFET is biased to provide IOFF to a current mirror that sinks a current BIOFF from the node, and an amplifier provides feedback from the node to the body terminals of the nFETs so that at steady state AION=BIOFF, where A and B are constants independent over a range of temperature. In this way, the ratio ION/IOFF is maintained at B/A for some range of temperatures. Other embodiments are described and claimed.
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