Methods and systems for determining a property of a specimen prior to, during, or subsequent to an etch process
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United States of America Patent
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-
Jul 12, 2005
Grant Date -
Dec 12, 2002
app pub date -
Sep 20, 2001
filing date -
Sep 20, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a property of a specimen prior to, during, or subsequent to an etch process. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.
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