Detecting over programmed memory
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United States of America Patent
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Jul 12, 2005
Grant Date -
Feb 3, 2005
app pub date -
Jul 29, 2003
filing date -
Jul 29, 2003
priority date (Note) -
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Abstract
In a non-volatile semiconductor memory system (or other type of memory system), a memory cell is programmed by changing the threshold voltage of that memory cell. Because of variations in the programming speeds of different memory cells in the system, the possibility exists that some memory cells will be over programmed. That is, in one example, the threshold voltage will be moved past the intended value or range of values. The present invention includes determining whether the memory cells are over programmed.
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