Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 19, 2005
Grant Date -
Oct 21, 2004
app pub date -
Sep 15, 2003
filing date -
May 18, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
This invention is directed to pure and modified Ta2O5 thin films deposited on suitable substrate and methods for making these Ta2O5 thin films. These Ta2O5 thin films exhibit superior properties for microwave communication, dynamic random access memory and integrated electronic applications. The Ta2O5 thin films perform well in these types of technologies due to the Ta 2O5 thin film component which allows for high dielectric constants, low dielectric loss, and good temperature and frequency stability, thus making them particularly useful in high frequency microwave applications.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully