Importance

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Abstract

A semiconductor memory device is provided which effectively reduces a consumption of current of a system of circuits associated with refresh operations. A control signal circuit 2 controls n-channel transistors 3C, 4B to be in an OFF-state based on an internal chip select signal SCI in an interval time period between the refresh operations, wherein the n-channel transistors 3C, 4B are connected between the system of circuits associated with refresh operations (an internal voltage-down circuit 3 and a boost circuit 4) and the ground, so as to break down a leak path of the system of circuits associated with refresh operations for reducing the leakage of current. At a timing of starting the refresh operation by triggering a timer, the internal chip select signal SCI is transitioned to a high level for supplying a ground voltage to the internal voltage-down circuit 3 and the boost circuit 4.

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First Claim