Ion beam lithography system
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United States of America Patent
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-
Aug 2, 2005
Grant Date -
N/A
app pub date -
Aug 17, 2000
filing date -
Aug 17, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A maskless plasma-formed ion beam lithography tool provides for patterning of sub-50 nm features on large area flat or curved substrate surfaces. The system is very compact and does not require an accelerator column and electrostatic beam scanning components. The patterns are formed by switching beamlets on or off from a two electrode blanking system with the substrate being scanned mechanically in one dimension. This arrangement can provide a maskless nano-beam lithography tool for economic and high throughput processing.
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