Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

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United States of America Patent

PATENT NO 6930051
SERIAL NO

10165861

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Abstract

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New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA LLCP O BOX 5800 MS-0161 ALBUQUERQUE NM 87185

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Manginell, Ronald P Albuquerque, NM 32 837
Schubert, W Kent Albuquerque, NM 8 236
Shul, Randy J Albuquerque, NM 21 441

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