Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
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United States of America Patent
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Aug 23, 2005
Grant Date -
May 13, 2004
app pub date -
Oct 27, 2003
filing date -
Mar 20, 1998
priority date (Note) -
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Abstract
A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.
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