Plasma etching

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United States of America Patent

PATENT NO 6933242
SERIAL NO

10018809

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a) forming a gas containing molecules having at least one methyl group (CH3) linked to nitrogen into a plasma; and b) etching the unmasked regions of the substrate by means of the plasma. For a substrate whose elemental constituents are selected from Groups II and VI of the Periodic Table, the plasma etching gas used is trimethylamine. Since the methyl compound of nitrogen has a lower bond energy than for hydrocarbon mixtures, free methyl radicals are easier to obtain and the gas is more efficient as a methyl source. In addition, compared with hydrocarbon mixtures, reduced polymer formation can be expected due to preferential formation of methyl radicals over polymer-generating hydrocarbon radicals because of the lower bond energy for the former.

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Patent Owner(s)

Patent OwnerAddress
SURFACE TECHNOLOGY SYSTEMS PLCGWENT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carlstrom, Carl-Fredrik Farsta, SE 5 40
Landgren, Gunnar Sollentuna, SE 1 9
Srinivasan, Anand Huddinge, SE 159 9444

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