Power transistor structure with non-uniform metal widths

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United States of America Patent

PATENT NO 6933562
SERIAL NO

10609191

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Abstract

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A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL SEMICONDUCTOR CORPORATION12500 TI BOULEVARD M/S 3999 DALLAS TX 75243

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hopper, Peter J San Jose, CA 249 2547
Lindorfer, Philipp San Jose, CA 61 897
Strachan, Andy Santa Clara, CA 28 176
Vashchenko, Vladislav Palo Alto, CA 158 1184

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