Optical proximity correction method utilizing gray bars as sub-resolution assist features
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United States of America Patent
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Aug 23, 2005
Grant Date -
Dec 12, 2002
app pub date -
Feb 27, 2002
filing date -
Feb 27, 2001
priority date (Note) -
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Abstract
A photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating optical proximity effects. The mask includes a plurality of resolvable features to be printed on the substrate, and at least one non-resolvable optical proximity correction feature disposed between two of the resolvable features to be printed, where the non-resolvable optical proximity correction feature has a transmission coefficient in the range of greater than 0% to less than 100%.
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