Method of depositing dielectric
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United States of America Patent
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Aug 30, 2005
Issued Date -
N/A
app pub date -
Jan 6, 2003
filing date -
Apr 14, 2000
priority date (Note) -
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Abstract
This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
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