Phase-change memory cell and method of fabricating the phase-change memory cell
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United States of America Patent
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Aug 30, 2005
Grant Date -
Aug 4, 2005
app pub date -
Jan 30, 2004
filing date -
Jan 30, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
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