Capacitor of semiconductor memory device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 30, 2005
Issued Date -
N/A
app pub date -
Dec 18, 2002
filing date -
Jun 28, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A capacitor and a method of manufacturing the same are disclosed. The BST dielectric film is disposed between the lower electrode by coating a sidewall of the upper electrode and then forming the lower electrode in a second contact hole defined by the upper electrode and BST film. As such, degradation in the step coverage characteristic caused by forming a BST dielectric film having a desired composition ratio is avoided.
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