Cleaning method and etching method
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United States of America Patent
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Sep 6, 2005
Grant Date -
Jun 10, 2004
app pub date -
Dec 18, 2000
filing date -
Dec 18, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.
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