Wavelength extension for backthinned silicon image arrays
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United States of America Patent
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Sep 13, 2005
Grant Date -
Jul 28, 2005
app pub date -
Jan 23, 2004
filing date -
Jan 23, 2004
priority date (Note) -
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Abstract
There is described a back thinned sensor in which a material is added on the front surface to extend the wavelength of the sensor into wavelengths it normally does not reach. In the preferred embodiment, the back-thinned layer comprises silicon and is the base for a CMOS device or a CCD. The photocathode in a night vision device comprises in the preferred unit GaAs.
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