Data restore in thryistor based memory devices
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United States of America Patent
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Sep 13, 2005
Grant Date -
N/A
app pub date -
Oct 29, 2003
filing date -
Oct 29, 2003
priority date (Note) -
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status (Latency Note)
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Abstract
In a thyristor based memory cell, one end of a reversed-biased diode is connected to the cathode of the thyristor. During standby, the second end of the diode is biased at a voltage that is higher than that at the cathode of the thyristor. During restore operation, the second end is pulled down to zero or even a negative value. If the cell is storing a '1,' the voltage at the thyristor cathode can be approximately 0.6 volt at the time of the pull down. The large forward-bias across the diode pulls down the thryistor cathode. This causes the thyristor to be restored. If the cell is storing a '0,' the voltage at the thyristor cathode can be approximately zero volt. The small or zero forward-bias across the diode is unable to disturb the '0' state. As a result, the memory cell is restored to its original state.
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