Method and system for programming and inhibiting multi-level, non-volatile memory cells
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United States of America Patent
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Sep 13, 2005
Grant Date -
Sep 16, 2004
app pub date -
Mar 24, 2004
filing date -
Dec 18, 2001
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Abstract
A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.
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