Non-volatile memory structure
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United States of America Patent
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Sep 20, 2005
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N/A
app pub date -
Jul 1, 2004
filing date -
Sep 17, 2003
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Abstract
A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from a floating gate, the programmable conductor is switched between its low and high resistive states to operate the flash memory cell. The resulting cell can be erased faster and has better endurance than a conventional flash memory cell.
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