Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof
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United States of America Patent
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Sep 20, 2005
Grant Date -
Aug 28, 2003
app pub date -
Jan 14, 2003
filing date -
Jan 17, 2002
priority date (Note) -
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Abstract
A vertical-current-flow resistive element includes a monolithic region having a first portion and a second portion arranged on top of one another and formed from a single material. The first portion has a first resistivity, and the second portion has a second resistivity, lower than the first resistivity. To this aim, a monolithic region with a uniform resistivity and a height greater than at least one of the other dimensions is first formed; then the resistivity of the first portion is increased by introducing, from the top, species that form a prevalently covalent bond with the conductive material of the monolithic region, so that the concentration of said species becomes higher in the first portion than in the second portion. Preferably, the conductive material is a binary or ternary alloy, chosen from among TiAl, TiSi, TiSi2, Ta, WSi, and the increase in resistivity is obtained by nitridation.
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