Vapor-assisted cryogenic cleaning
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United States of America Patent
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Sep 27, 2005
Grant Date -
Oct 9, 2003
app pub date -
Mar 31, 2003
filing date -
Apr 5, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.
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