Method for using a hard mask for critical dimension growth containment
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United States of America Patent
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Oct 4, 2005
Grant Date -
Sep 19, 2002
app pub date -
Nov 9, 2001
filing date -
Jan 20, 1998
priority date (Note) -
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Abstract
A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.
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