Low-voltage and interface damage-free polymer memory device
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United States of America Patent
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Oct 4, 2005
Grant Date -
Aug 5, 2004
app pub date -
Jan 21, 2004
filing date -
Jun 29, 2001
priority date (Note) -
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Abstract
One embodiment of the invention relates to a polymer memory device and a method of making it. The polymer memory device may include a composite or single layer of a ferroelectric polymer memory that addresses surface engineering needs according to various embodiments. The ferroelectric polymer memory structure may include crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure may include spin-on and/or Langmuir-Blodgett deposited compositions. One embodiment of the invention relates to a method making embodiments of the polymer memory device. One embodiment of the invention relates to a memory system that allows the polymer memory device to interface with various existing hosts.
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