Method and apparatus for gas temperature control in a semiconductor processing system
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United States of America Patent
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Oct 18, 2005
Grant Date -
Jan 22, 2004
app pub date -
Jul 17, 2002
filing date -
Jul 17, 2002
priority date (Note) -
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Abstract
A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas temperature control apparatus for semiconductor processing includes a gas delivery line coupled between a processing chamber and a gas source. An enclosure substantially encloses the gas delivery line and is adapted to flow a heat transfer fluid away from the processing chamber.
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