Silicon oxide film formation method
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United States of America Patent
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Oct 18, 2005
Grant Date -
Jun 26, 2003
app pub date -
Dec 23, 2002
filing date -
Dec 25, 2001
priority date (Note) -
Expired
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Abstract
A silicon oxide film formation method enhances the efficiency of generating atomic oxygen and improves film quality of a silicon film (SiO2 film) in forming the silicon oxide film using an RS-CVD system. Nitrogen atom containing gas (N2 gas, NO gas, N2O gas, NO2 gas or the like) is added to oxygen atom containing gas (O2 gas, O3 gas or the like) introduced into a plasma generating space in a vacuum container to produce plasmas with these gases and to thereby increase the quantity of atomic oxygen generated by the plasmas in the plasma generating space.
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