Method of manufacturing a semiconductor device having thin film transistor and capacitor
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United States of America Patent
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Oct 18, 2005
Issued Date -
N/A
app pub date -
Jun 26, 2003
filing date -
Jan 29, 1999
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor with a storage capacitor having sufficient memory capacity while requiring a minimum area is provided. The method includes steps for manufacturing a storage capacitor of a pixel region that has a structure of a first storage capacitor and a second storage capacitor stacked on top of the other and connected in parallel with each other. The method further includes steps for forming the first storage capacitor having a first capacitance electrode formed in the same layer as a drain region, a first dielectric, and a second capacitance electrode formed in the same layer as a gate wiring. Still further, the method includes steps for forming the second storage capacitor including the second capacitance electrode, a second dielectric, and a third capacitance electrode formed in the same layer as a light-shielding film.
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