Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
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United States of America Patent
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Oct 18, 2005
Grant Date -
Dec 4, 2003
app pub date -
Feb 24, 2003
filing date -
May 30, 2002
priority date (Note) -
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Abstract
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.
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