Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 18, 2005
Grant Date -
Sep 30, 2004
app pub date -
Mar 27, 2003
filing date -
Mar 27, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process produces a layer of material which functions as a copper barrier layer, adhesion layer and a copper seed layer in a device of an integrated circuit, particularly in damascene or dual damascene structures. The method includes a step of depositing a diffusion barrier layer over a dielectric, a step of depositing a layer of graded metal alloy of two or more metals, and a step of depositing a copper seed layer, which step is essentially a part of the step of depositing the alloy layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully