Semiconductor device having at least one source/drain region formed on an isolation region and a method of manufacture therefor
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United States of America Patent
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Oct 25, 2005
Grant Date -
Dec 19, 2002
app pub date -
Jun 15, 2001
filing date -
Jun 15, 2001
priority date (Note) -
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Abstract
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a semiconductor substrate having a gate formed there over. The semiconductor device further includes an isolation region having at least one source/drain region formed there over.
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