Semiconductor device having multi-layer interconnection structure and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 1, 2005
Grant Date -
Nov 11, 2004
app pub date -
Jul 29, 2003
filing date -
Apr 28, 2003
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a foundation having a first conductive region, and an inter-connection layer provided separate from the foundation. A first region occupying a range from the foundation to the interconnection layer is filled with gas or provided with a first interlayer dielectric film. A first connection plug provided in the first region electrically connects the first conductive region and the interconnection layer. A dielectric first support plug is provided in the first region so that so that the gas can be filled or the first interlayer dielectric film can be provided between the first connection plug and the first support plug. Further, the first plug extends from the interconnection layer to the foundation, and has a second Young's modulus.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully