Capacitor in semiconductor device having dual dielectric film structure and method for fabricating the same
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United States of America Patent
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Nov 15, 2005
Issued Date -
N/A
app pub date -
Dec 27, 2002
filing date -
Apr 23, 2002
priority date (Note) -
Expired
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Abstract
A capacitor in a semiconductor device having a dual dielectric film structure and a fabrication method therefor are disclosed. The capacitor comprises: a lower electrode formed on a semiconductor substrate, a dielectric film of a dual dielectric film structure composed of an Si3N4 chloride-free thin film and a Ta2O5 thin film, which is formed on the lower electrode, and an upper electrode formed on the dielectric film. Meanwhile, the method for fabricating the capacitor comprises the steps of: forming a lower electrode on a semiconductor substrate, forming a dielectric film of a dual dielectric film structure composed of an Si3N4 thin film and a Ta2O5 thin film on the lower electrode, and forming an upper electrode on the dielectric film.
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