Semiconductor light emitting device and fabrication method thereof
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United States of America Patent
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Nov 22, 2005
Grant Date -
Sep 25, 2003
app pub date -
Jan 14, 2003
filing date -
Jan 18, 2002
priority date (Note) -
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Abstract
A semiconductor light emitting device includes a crystal layer formed on a substrate, the crystal layer having a tilt crystal plane tilted from the principal plane of the substrate, and a first conductive type layer, an active layer, and a second conductive type layer, which are formed on the crystal layer in such a manner as to extend within planes parallel to the tilt crystal plane, wherein the device has a shape formed by removing the apex and its vicinity of the stacked layer structure formed on the substrate. Such a semiconductor light emitting device is excellent in luminous efficiency even if the device has a three-dimensional device structure. The present invention also provides a method of fabricating the above semiconductor light emitting device.
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