Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
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United States of America Patent
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Dec 6, 2005
Grant Date -
Dec 4, 2003
app pub date -
Mar 4, 2003
filing date -
Mar 4, 2002
priority date (Note) -
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Abstract
Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3 (TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.
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