| 7,385,235 Spacer chalcogenide memory device
|
81 |
2004
|
| 7,608,503 Side wall active pin memory and manufacturing method
|
7 |
2005
|
| 7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
|
2 |
2006
|
| 7,471,555 Thermally insulated phase change memory device
|
4 |
2006
|
| 7,599,217 Memory cell device and manufacturing method
|
3 |
2006
|
| 8,062,833 Chalcogenide layer etching method
|
0 |
2006
|
| 7,554,144 Memory device and manufacturing method
|
5 |
2006
|
| 7,928,421 Phase change memory cell with vacuum spacer
|
1 |
2006
|
| 7,423,300 Single-mask phase change memory element
|
82 |
2006
|
| 7,459,717 Phase change memory cell and manufacturing method
|
9 |
2006
|
| 7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method
|
2 |
2006
|
| 7,560,337 Programmable resistive RAM and manufacturing method
|
19 |
2006
|
| 7,696,506 Memory cell with memory material insulation and manufacturing method
|
1 |
2006
|
| 7,785,920 Method for making a pillar-type phase change memory element
|
1 |
2006
|
| 7,741,636 Programmable resistive RAM and manufacturing method
|
1 |
2006
|
| 7,450,411 Phase change memory device and manufacturing method
|
2 |
2006
|
| 7,772,581 Memory device having wide area phase change element and small electrode contact area
|
11 |
2006
|
| 7,863,655 Phase change memory cells with dual access devices
|
1 |
2006
|
| 7,476,587 Method for making a self-converged memory material element for memory cell
|
13 |
2006
|
| 7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
|
0 |
2006
|
| 7,688,619 Phase change memory cell and manufacturing method
|
36 |
2006
|
| 7,786,460 Phase change memory device and manufacturing method
|
25 |
2007
|
| 7,483,292 Memory cell with separate read and program paths
|
2 |
2007
|
| 7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode
|
0 |
2007
|
| 7,786,461 Memory structure with reduced-size memory element between memory material portions
|
4 |
2007
|
| 7,569,844 Memory cell sidewall contacting side electrode
|
22 |
2007
|
| 7,514,334 Thin film plate phase change RAM circuit and manufacturing method
|
44 |
2007
|
| 7,884,342 Phase change memory bridge cell
|
0 |
2007
|
| 7,729,161 Phase change memory with dual word lines and source lines and method of operating same
|
3 |
2007
|
| 8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing
|
0 |
2007
|
| 7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
|
3 |
2007
|
| 7,551,473 Programmable resistive memory with diode structure
|
12 |
2007
|
| 7,919,766 Method for making self aligning pillar memory cell device
|
1 |
2007
|
| 7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
|
1 |
2007
|
| 7,639,527 Phase change memory dynamic resistance test and manufacturing methods
|
1 |
2008
|
| 7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same
|
3 |
2008
|
| 7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode
|
2 |
2008
|
| 7,879,645 Fill-in etching free pore device
|
7 |
2008
|
| 7,619,311 Memory cell device with coplanar electrode surface and method
|
9 |
2008
|
| 8,158,965 Heating center PCRAM structure and methods for making
|
0 |
2008
|
| 7,935,564 Self-converging bottom electrode ring
|
3 |
2008
|
| 8,084,842 Thermally stabilized electrode structure
|
1 |
2008
|
| 7,791,057 Memory cell having a buried phase change region and method for fabricating the same
|
4 |
2008
|
| 7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state
|
7 |
2008
|
| 8,415,651 Phase change memory cell having top and bottom sidewall contacts
|
0 |
2008
|
| 7,642,123 Thermally insulated phase change memory manufacturing method
|
3 |
2008
|
| 7,867,815 Spacer electrode small pin phase change RAM and manufacturing method
|
0 |
2008
|
| 7,777,215 Resistive memory structure with buffer layer
|
7 |
2008
|
| 7,932,506 Fully self-aligned pore-type memory cell having diode access device
|
1 |
2008
|
| 7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application
|
3 |
2008
|
| 7,719,913 Sensing circuit for PCRAM applications
|
1 |
2008
|
| 8,324,605 Dielectric mesh isolated phase change structure for phase change memory
|
0 |
2008
|
| 7,897,954 Dielectric-sandwiched pillar memory device
|
0 |
2008
|
| 8,036,014 Phase change memory program method without over-reset
|
3 |
2008
|
| 7,902,538 Phase change memory cell with first and second transition temperature portions
|
1 |
2008
|
| 7,638,359 Method for making a self-converged void and bottom electrode for memory cell
|
2 |
2008
|
| 7,749,854 Method for making a self-converged memory material element for memory cell
|
0 |
2008
|
| 7,869,270 Set algorithm for phase change memory cell
|
2 |
2008
|
| 8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
|
1 |
2009
|
| 7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array
|
1 |
2009
|
| 8,107,283 Method for setting PCRAM devices
|
3 |
2009
|
| 8,030,635 Polysilicon plug bipolar transistor for phase change memory
|
2 |
2009
|
| 7,910,906 Memory cell device with circumferentially-extending memory element
|
0 |
2009
|
| 8,084,760 Ring-shaped electrode and manufacturing method for same
|
0 |
2009
|
| 8,173,987 Integrated circuit 3D phase change memory array and manufacturing method
|
0 |
2009
|
| 8,077,505 Bipolar switching of phase change device
|
0 |
2009
|
| 8,097,871 Low operational current phase change memory structures
|
0 |
2009
|
| 8,134,857 Methods for high speed reading operation of phase change memory and device employing same
|
1 |
2009
|
| 7,933,139 One-transistor, one-resistor, one-capacitor phase change memory
|
3 |
2009
|
| 7,972,893 Memory device manufacturing method
|
0 |
2009
|
| 8,350,316 Phase change memory cells having vertical channel access transistor and memory plane
|
0 |
2009
|
| 7,968,876 Phase change memory cell having vertical channel access transistor
|
1 |
2009
|
| 8,158,963 Programmable resistive RAM and manufacturing method
|
0 |
2009
|
| 8,406,033 Memory device and method for sensing and fixing margin cells
|
0 |
2009
|
| 8,064,247 Rewritable memory device based on segregation/re-absorption
|
0 |
2009
|
| 8,110,822 Thermal protect PCRAM structure and methods for making
|
1 |
2009
|
| 7,894,254 Refresh circuitry for phase change memory
|
3 |
2009
|
| 8,198,619 Phase change memory cell structure
|
0 |
2009
|
| 8,064,248 2T2R-1T1R mix mode phase change memory array
|
1 |
2009
|
| 7,972,895 Memory cell device with coplanar electrode surface and method
|
1 |
2009
|
| 7,993,962 I-shaped phase change memory cell
|
0 |
2009
|
| 8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
|
0 |
2009
|
| 7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
|
0 |
2009
|
| 7,929,340 Phase change memory cell and manufacturing method
|
0 |
2010
|
| 8,238,149 Methods and apparatus for reducing defect bits in phase change memory
|
0 |
2010
|
| 8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state
|
0 |
2010
|
| 8,363,463 Phase change memory having one or more non-constant doping profiles
|
0 |
2010
|
| 8,178,387 Methods for reducing recrystallization time for a phase change material
|
0 |
2010
|
| 8,178,405 Resistor random access memory cell device
|
0 |
2010
|
| 7,978,509 Phase change memory with dual word lines and source lines and method of operating same
|
0 |
2010
|
| 8,178,388 Programmable resistive RAM and manufacturing method
|
1 |
2010
|
| 8,310,864 Self-aligned bit line under word line memory array
|
0 |
2010
|
| 7,964,437 Memory device having wide area phase change element and small electrode contact area
|
0 |
2010
|
| 7,943,920 Resistive memory structure with buffer layer
|
0 |
2010
|
| 8,008,114 Phase change memory device and manufacturing method
|
0 |
2010
|
| 7,875,493 Memory structure with reduced-size memory element between memory material portions
|
0 |
2010
|
| 8,395,935 Cross-point self-aligned reduced cell size phase change memory
|
0 |
2010
|
| 8,110,430 Vacuum jacket for phase change memory element
|
0 |
2010
|
| 8,110,456 Method for making a self aligning memory device
|
0 |
2010
|
| 8,094,488 Set algorithm for phase change memory cell
|
0 |
2010
|
| 8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same
|
0 |
2010
|
| 8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application
|
0 |
2011
|
| 8,228,721 Refresh circuitry for phase change memory
|
0 |
2011
|
| 8,222,071 Method for making self aligning pillar memory cell device
|
0 |
2011
|
| 8,313,979 Phase change memory cell having vertical channel access transistor
|
0 |
2011
|
| 8,237,144 Polysilicon plug bipolar transistor for phase change memory
|
0 |
2011
|
