Importance

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Abstract

A vacuum-processing method carries out, in a vacuum-processing vessel (4), a process wherein a condition of an interior of the vacuum processing vessel (4) changes as the number of processed objects (W) increases, such as a film-forming process for forming a thin film on a semiconductor wafer (W) by using a process gas in the vacuum processing vessel (4). The vacuum-processing method controls a controlled parameter directly affecting an effect of the process, such as film thickness, so that the controlled parameter is maintained at a target value (rt). The vacuum-processing method determines a model function obeying a change of the condition of the interior of the processing vessel (4), and calculates the target value (rt) of the controlled parameter every time one or a plurality of objects (W) are processed on the basis of a set value (Dt) of a set parameter representing the effect of the process, and the model function.

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First Claim