Horizontal access semiconductor photo detector
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Dec 20, 2005
Grant Date -
Jan 22, 2004
app pub date -
May 18, 2001
filing date -
May 20, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.
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