Fabrication method of semiconductor integrated circuit device

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United States of America Patent

PATENT NO 6979650
APP PUB NO 20040248418A1
SERIAL NO

10883754

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Abstract

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In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1-1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3-9 weight %, preferably about 4-8 weight %, and more preferably about 8 weight %.

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Patent Owner(s)

Patent OwnerAddress
RENESAS TECHNOLOGY CORPTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Hisahiko Tokyo, JP 13 92
Hiyama, Masaki Yokohama, JP 2 1
Nakabayshi, Shinichi Hitachinaka, JP 2 1
Nishiguchi, Takashi Hitachinaka, JP 12 91
Tsuchiyama, Hirofumi Hitachinaka, JP 17 183

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