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Abstract

A semiconductor memory device includes a first insulating film provided on a semiconductor substrate between first and second diffusion regions, a first gate electrode provided on the first insulating film, a second insulating film provided on the semiconductor substrate between the second diffusion region and a third diffusion region, and a second gate electrode provided on the second insulating film. The first and second diffusion regions, first insulating film, and first gate electrode constitute a first memory cell, while the second and third diffusion regions, second insulating film, and second gate electrode constitute a second memory cell. The first and second gate electrodes are connected in common to form a word line electrode. The first and third diffusion regions are connected to first and second read bit lines. The second diffusion region is connected to a program and erase bit line.

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First Claim