Capacitor structure in a semiconductor device
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United States of America Patent
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Dec 27, 2005
Grant Date -
N/A
app pub date -
Jun 16, 2004
filing date -
Jun 16, 2004
priority date (Note) -
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Importance
Abstract
A capacitor structure is provided that includes a substrate, a first group of conducting strips, a second group of conducting strips, a third group of conducting strips, and a fourth group of conducting strips. The capacitor structure can further include a first set of vertical vias, a second set of vertical vias, a third set of vertical vias, and a fourth set of vertical vias.
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