Method for making high density nonvolatile memory
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United States of America Patent
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Jan 10, 2006
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N/A
app pub date -
May 26, 2004
filing date -
Dec 19, 2002
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Abstract
An improved method for fabricating a three dimensional monolithic memory with increased density. The method includes forming conductors preferably comprising tungsten, then filling and planarizing; above the conductors forming semiconductor elements preferably comprising two diode portions and an antifuse, then filling and planarizing; and continuing to form conductors and semiconductor elements in multiple stories of memories. The arrangement of processing steps and the choice of materials decreases aspect ratio of each memory cell, improving the reliability of gap fill and preventing etch undercut.
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