Cobalt silicide fabrication using protective titanium
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United States of America Patent
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Jan 10, 2006
Grant Date -
Aug 7, 2003
app pub date -
Jan 23, 2002
filing date -
Jan 23, 2002
priority date (Note) -
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Abstract
A cobalt silicide fabrication process entails first depositing a cobalt layer (120) on a silicon-containing EPROM region. A titanium layer (130) is formed over the cobalt layer by ionized physical vapor deposition ('IPVD') to protect the cobalt layer from contaminant gases. Cobalt of the cobalt layer is reacted with silicon of the EPROM region to form a cobalt silicide layer (210) after which the titanium layer and any unreacted cobalt are removed. Use of IPVD to form the titanium layer by improves the step coverage to produce a better cobalt silicide layer.
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