Polymers for photoresist and photoresist compositions using the same
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United States of America Patent
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Jan 17, 2006
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N/A
app pub date -
Mar 21, 2003
filing date -
Aug 27, 1998
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Abstract
The present invention relates to photoresist monomers, polymers formed therefrom and photoresist compositions suitable for photolithography processes employing a DUV light source, such as KrF (249 nm) and ArF(193 nm); EUV; VUV; E-beam; ion-beam; and X-ray. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: ##STR1## wherein, m is 1 or 2. Polymers of the present invention comprise repeating units derived from the comonomer of Chemical Formula 1, preferably together with monomers of the following Chemical Formula 2: ##STR2## wherein, R* is an acid-labile group, and l is 1 or 2.
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