nF-Opening Aiv Structures
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United States of America Patent
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Jan 24, 2006
Grant Date -
Apr 3, 2003
app pub date -
Aug 28, 2002
filing date -
Oct 2, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The low-cost lithography disclosed in the present invention is based on two approaches: 1. Use a low-precision nF-opening mask to implement high-precision opening-related patterns (e.g. inter-level connections and segmented-lines); 2. Improve the mask re-usability with programmable litho-system and/or logic litho-system. Pattern distribution enables the mask-repair through redundancy. It further enables highly-corrected masks, which provide higher-order correction to clear patterns on wafer.
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