Semiconductor memory device and manufacturing method thereof
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United States of America Patent
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Feb 7, 2006
Grant Date -
Dec 5, 2002
app pub date -
Jun 28, 2002
filing date -
Apr 9, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
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