Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device
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United States of America Patent
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Feb 7, 2006
Grant Date -
Oct 21, 2004
app pub date -
Jun 6, 2003
filing date -
Jun 10, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a multi-beam semiconductor laser including nitride III-V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III-V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
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