Semiconductor constructions having crystalline dielectric layers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 7, 2006
Issued Date -
N/A
app pub date -
Dec 30, 2004
filing date -
Apr 10, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first conductive material. A second layer of the dielectric material is on the first layer. A second conductive material is over the second layer of the dielectric material. A construction in accordance with an implementation of the invention can include a pair of capacitor electrodes having capacitor dielectric material therebetween comprising a composite of two immediately juxtaposed and contacting, yet discrete, layers of the same capacitor dielectric material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully