Method for creating neo-wafers from singulated integrated circuit die and a device made according to the method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 14, 2006
Grant Date -
Jul 22, 2004
app pub date -
Nov 5, 2003
filing date -
Nov 6, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A neo-wafer made from integrated circuit die and methods for making a neo-wafer are disclosed. Recesses are formed on a substrate and a dielectric layer with conductive pads is created for the receiving of one or more die. Die are flip-chip bonded to the conductive pads and all voids under-filled. The neo-wafer is thinned to expose the dielectric and the conductive pads exposed, creating a neo-wafer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully