Variable current sinking for coarse/fine programming of non-volatile memory
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United States of America Patent
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Feb 21, 2006
Grant Date -
Jul 28, 2005
app pub date -
Jan 27, 2004
filing date -
Jan 27, 2004
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Abstract
A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
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