Semiconductor device and method

United States of America Patent

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Feb 28, 2006
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Feb 3, 2005
app pub date
May 14, 2004
filing date
May 31, 2000

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Abstract

Circuit (10) has a dual layer gate dielectric (29) formed over a semiconductor substrate (14). The gate dielectric includes an amorphous layer (40) and a monocrystalline layer (42). The monocrystalline layer typically has a higher dielectric constant than the amorphous layer.

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Patent Owner(s)

Patent Owner	Address
SHENZHEN XINGUODU TECHNOLOGY CO LTD	518000 17B JINSONG BUILDING TAIRAN 4TH ROAD SHATOU STREET FUTIAN DISTRICT SHENZHEN CITY GUANGDONG PROVINCE SHENZHEN CITY GUANGDONG PROVINCE 518000

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Droopad, Ravindranath	Chandler, AZ	76	2248
Eisenbeiser, Kurt	Tempe, AZ	22	500
Wang, Jun	Gilbert, AZ	2215	18848

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Semiconductor device and method

Number of patents in Portfolio can not be more than 2000

United States of America Patent

10845523

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PATENT NO	7005717
APP PUB NO	20050023622A1
SERIAL NO	10845523
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 28, 2006	US,7005717,B2 US7005717B2	GRANTED PATENT AS SECOND PUBLICATION
February 03, 2005	US,20050023622,A1 US20050023622A1	FIRST PUBLISHED PATENT APPLICATION

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10845523

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