Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same
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United States of America Patent
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Mar 7, 2006
Grant Date -
Jun 16, 2005
app pub date -
Oct 6, 2004
filing date -
Dec 10, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a semiconductor device including a metal-insulator-metal (MIM) capacitor and a method for fabricating the same, a first metal layer and a dielectric film are sequentially formed on an insulating layer. The dielectric film is patterned, wherein a remaining portion is incorporated into the MIM capacitor, and a second metal layer is formed on the patterned dielectric film and the first metal layer. The second metal layer, the patterned dielectric film, and the first metal layer are patterned at one time. Interconnects are formed by stacking the first and the second metal layers when forming the MIM capacitor, which includes a lower electrode formed of the first metal layer, the dielectric film, and an upper electrode formed of the second metal layer.
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